Reduction of trapping and recombination in upgraded metallurgical grade silicon: Impact of phosphorous diffusion gettering
نویسندگان
چکیده
Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as an alternative material for solar cells due to its low cost, environmental impact and CAPEX. Maximum cell efficiencies at the level of those obtained from high purity poly-Si have been reported. However, a higher defect density compensated doping character result in UMG-based varying over wider ranges frequency distribution charts. In this report we characterize mc-Si UMG samples with different densities, comparing them monocrystalline (mono-Si) commercial high-performance multicrystalline (mc-Si) samples, analysing carrier trapping by means photoconductance (PC) decay measurements, evolution after applying phosphorous diffusion gettering (PDG) process. When analyzing time constant PC slow (66.8 ± 14.3 ms) fast (16.1 3.5 traps are found while no evidence is mono-UMG samples. Slow effectively removed PDG process, do remain. The influence dislocations clusters possible role oxygen, revealed Fourier-transform infrared spectroscopy (FTIR) discussed. Finally, improvement minority lifetime treatment reported each sample type, reaching values up 140 ?s neither nor interstitial oxygen FTIR-peaks.
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ژورنال
عنوان ژورنال: Solar Energy Materials and Solar Cells
سال: 2022
ISSN: ['0927-0248', '1879-3398']
DOI: https://doi.org/10.1016/j.solmat.2021.111410